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A-DATA Technology DQVE1908 512MB
Samsung M378A4G43MB1-CTD 32GB

A-DATA Technology DQVE1908 512MB vs Samsung M378A4G43MB1-CTD 32GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.4
    测试中的平均数值
Samsung M378A4G43MB1-CTD 32GB 需要考虑的原因
Samsung M378A4G43MB1-CTD 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 66
    左右 -74% 更低的延时
  • 更快的写入速度，GB/s
    12.6 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Samsung M378A4G43MB1-CTD 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 38
  • 读取速度，GB/s
    2,775.5 left arrow 15.4
  • 写入速度，GB/s
    1,557.9 left arrow 12.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    382 left arrow 3147

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Samsung M378A4G43MB1-CTD 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Apacer Technology 78.DAGP2.4030B 16GB
Apacer Technology 78.DAGP2.4030B 16GB
内存RAM
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C16-8GFX 8GB
G Skill Intl F4-3200C16-8GFX 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Corsair CMT64GX4M4Z3600C18 16GB
Corsair CMT64GX4M4Z3600C18 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A2666C18 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK16GX4M2D2666C16 8GB
Corsair CMK16GX4M2D2666C16 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BL8G32C16U4R.8FE 8GB
Crucial Technology BL8G32C16U4R.8FE 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Samsung M378A2K43BB1-CPB 16GB
Samsung M378A2K43BB1-CPB 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
INTENSO 5641152 4GB
INTENSO 5641152 4GB
内存RAM