A-DATA Technology DQVE1B16 2GB vs Samsung M378T5663DZ3-CF7 2GB

总分

A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

总分

Samsung M378T5663DZ3-CF7 2GB

Samsung M378T5663DZ3-CF7 2GB

差异规格评论

差异

A-DATA Technology DQVE1B16 2GB

需要考虑的原因
A-DATA Technology DQVE1B16 2GB

报告一个错误

Samsung M378T5663DZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663DZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

52 68

左右 -31% 更低的延时
更快的读取速度，GB/s

5 4

测试中的平均数值
更快的写入速度，GB/s

2,384.7 2,285.0

测试中的平均数值

规格

完整的技术规格清单

A-DATA Technology DQVE1B16 2GB

Samsung M378T5663DZ3-CF7 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

68 52
读取速度，GB/s

4,165.3 5,635.1
写入速度，GB/s

2,285.0 2,384.7
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

784 1037

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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