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A-DATA Technology HY64C1C1624ZY 4GB
AMD R538G1601U2S-UGO 8GB

A-DATA Technology HY64C1C1624ZY 4GB vs AMD R538G1601U2S-UGO 8GB

总分
star star star star star
A-DATA Technology HY64C1C1624ZY 4GB

A-DATA Technology HY64C1C1624ZY 4GB

总分
star star star star star
AMD R538G1601U2S-UGO 8GB

AMD R538G1601U2S-UGO 8GB

差异 规格 评论

差异

A-DATA Technology HY64C1C1624ZY 4GB 需要考虑的原因
A-DATA Technology HY64C1C1624ZY 4GB
报告一个错误
AMD R538G1601U2S-UGO 8GB 需要考虑的原因
AMD R538G1601U2S-UGO 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 37
    左右 -37% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 7.0
    测试中的平均数值

规格

完整的技术规格清单
A-DATA Technology HY64C1C1624ZY 4GB
AMD R538G1601U2S-UGO 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    37 left arrow 27
  • 读取速度，GB/s
    12.0 left arrow 13.9
  • 写入速度，GB/s
    7.0 left arrow 9.4
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1905 left arrow 2507

A-DATA Technology HY64C1C1624ZY 4GB RAM的比较

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

AMD R538G1601U2S-UGO 8GB RAM的比较

Patriot Memory (PDP Systems) PSD38G16002 8GB
AMD R538G1601U2S-UO 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
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Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
G Skill Intl F4-2133C15-8GNS 8GB
G Skill Intl F4-2133C15-8GNS 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
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Corsair CMK16GX4M2K4266C19 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Corsair CMK16GX4M2A2666C18 8GB
Corsair CMK16GX4M2A2666C18 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMK8GX4M2B3000C15 4GB
Corsair CMK8GX4M2B3000C15 4GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA81GU6CJR8N-XN 8GB
SK Hynix HMA81GU6CJR8N-XN 8GB
内存RAM
Mushkin 991988 (996988) 4GB
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Mushkin 991988S (996988S) 4GB
Mushkin 991988S (996988S) 4GB
内存RAM
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Kingston HP16D3LS1KBGH/4G 4GB
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G Skill Intl F4-3600C16-32GTZN 32GB
内存RAM
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Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Corsair CMK32GX4M2L3000C15 16GB
内存RAM