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A-DATA Technology VDQVE1B16 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology VDQVE1B16 2GB vs A-DATA Technology AO1P32NC8W1-BDAS 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 49
    左右 6% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 11.5
    测试中的平均数值
A-DATA Technology AO1P32NC8W1-BDAS 8GB 需要考虑的原因
A-DATA Technology AO1P32NC8W1-BDAS 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 49
  • 读取速度，GB/s
    4,937.3 left arrow 15.8
  • 写入速度，GB/s
    2,061.2 left arrow 11.5
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2673

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

A-DATA Technology AO1P32NC8W1-BDAS 8GB RAM的比较

Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
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Kingston 9965525-018.A00LF 4GB
Kingston HP26D4U9S8MD-8 8GB
Kingston HP26D4U9S8MD-8 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Corsair CMT16GX4M2C3466C16 8GB
Corsair CMT16GX4M2C3466C16 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
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G Skill Intl F4-2800C15-4GTZB 4GB
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Samsung V-GeN D4S4GL32A8TL 4GB
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SK Hynix HYMP512U64CP8-Y5 1GB
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G Skill Intl F4-2666C19-8GNT 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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Kingston MSI24D4S7D8MH-16 16GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Corsair CMD64GX4M4B3000C15 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
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内存RAM
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Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3600C17-8GTZR 8GB
G Skill Intl F4-3600C17-8GTZR 8GB
内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
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Kingston 9905403-500.A01LF 8GB
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内存RAM