A-DATA Technology VDQVE1B16 2GB vs A-DATA Technology DDR4 3600 2OZ 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 19

测试中的平均数值
更快的写入速度，GB/s

2,061.2 14.9

测试中的平均数值

A-DATA Technology DDR4 3600 2OZ 8GB

需要考虑的原因
A-DATA Technology DDR4 3600 2OZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 46

左右 -84% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology DDR4 3600 2OZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 25
读取速度，GB/s

4,937.3 19.0
写入速度，GB/s

2,061.2 14.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

759 3683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DDR4 3600 8GB

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Samsung M378B5173BH0-CH9 4GB

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A-DATA Technology DDR4 3600 2OZ 8GB

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A-DATA Technology DDR3 1600 4GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB