A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-2400C16-4GRS 4GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

G Skill Intl F4-2400C16-4GRS 4GB

G Skill Intl F4-2400C16-4GRS 4GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值
更快的写入速度，GB/s

2,061.2 12.6

测试中的平均数值

G Skill Intl F4-2400C16-4GRS 4GB

需要考虑的原因
G Skill Intl F4-2400C16-4GRS 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 46

左右 -100% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-2400C16-4GRS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 23
读取速度，GB/s

4,937.3 16.6
写入速度，GB/s

2,061.2 12.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 2561

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-515.A00LF 8GB

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G Skill Intl F4-4000C16-8GVK 8GB

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Crucial Technology CT8G4SFD824A.C16FADP 8GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

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Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

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Kingston 9905624-008.A00G 8GB

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Patriot Memory (PDP Systems) 4000 C19 Series 8GB

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