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A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3466C16-8GTZ 8GB

A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-3466C16-8GTZ 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 15.3
    测试中的平均数值
G Skill Intl F4-3466C16-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3466C16-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 46
    左右 -130% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3466C16-8GTZ 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 20
  • 读取速度，GB/s
    4,937.3 left arrow 19.2
  • 写入速度，GB/s
    2,061.2 left arrow 15.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 3429

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

G Skill Intl F4-3466C16-8GTZ 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
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Kingston 2GB-DDR2 800Mhz 2GB
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Crucial Technology CT16G4DFD8213.C16FBR 16GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
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AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Crucial Technology BLM8G44C19U4B.M8FE1 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Crucial Technology CT16G4SFRA266.C8FE 16GB
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Apacer Technology 78.01G86.9H50C 1GB
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Corsair CMK16GX4M2E4000C19 8GB
内存RAM
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Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2666C19-8GVR 8GB
G Skill Intl F4-2666C19-8GVR 8GB
内存RAM
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Kingston 9905403-447.A00LF 4GB
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Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
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内存RAM
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Samsung DDR3 8GB 1600MHz 8GB
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Kingston 9932291-002.A00G 4GB
内存RAM
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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OCMEMORY OCM3200CL16D-16GBN 8GB
内存RAM