A-DATA Technology VDQVE1B16 2GB vs Kingston KF2933C17S4/16G 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Kingston KF2933C17S4/16G 16GB

Kingston KF2933C17S4/16G 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 16.2

测试中的平均数值
更快的写入速度，GB/s

2,061.2 14.0

测试中的平均数值

Kingston KF2933C17S4/16G 16GB

需要考虑的原因
Kingston KF2933C17S4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 46

左右 -77% 更低的延时
更高的内存带宽，mbps

23400 6400

左右 3.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Kingston KF2933C17S4/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 26
读取速度，GB/s

4,937.3 16.2
写入速度，GB/s

2,061.2 14.0
内存带宽，mbps

6400 23400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

759 3377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM2X1024-8500C5D 1GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F4-3200C16-8GVS 8GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

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Samsung M393B5170FH0-CH9 4GB

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