A-DATA Technology VDQVE1B16 2GB vs Patriot Memory (PDP Systems) PSD48G21332S 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 16.1

测试中的平均数值
更快的写入速度，GB/s

2,061.2 12.3

测试中的平均数值

Patriot Memory (PDP Systems) PSD48G21332S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD48G21332S 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 -64% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 28
读取速度，GB/s

4,937.3 16.1
写入速度，GB/s

2,061.2 12.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 2742

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965662-015.A00G 16GB

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A-DATA Technology VDQVE1B16 2GB

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Patriot Memory (PDP Systems) PSD48G21332S 8GB

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Kingston 9905783-025.A01G 16GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

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Samsung M378B5673EH1-CF8 2GB

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Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

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Gloway International (HK) STK4U2400D17042C 4GB