A-DATA Technology VDQVE1B16 2GB vs Samsung V-GeN D4S16GL26A8TL6 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 16

测试中的平均数值
更快的写入速度，GB/s

2,061.2 13.4

测试中的平均数值

Samsung V-GeN D4S16GL26A8TL6 16GB

需要考虑的原因
Samsung V-GeN D4S16GL26A8TL6 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 46

左右 -44% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Samsung V-GeN D4S16GL26A8TL6 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 32
读取速度，GB/s

4,937.3 16.0
写入速度，GB/s

2,061.2 13.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 1897

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3000C16-8GSXWB 8GB

G Skill Intl F4-3000C16-8GSXWB 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMK8GX4M1Z3200C16 8GB

Corsair CMK8GX4M1Z3200C16 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston KF3200C20S4/8G 8GB

Kingston KF3200C20S4/8G 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Kingston KHX2666C15/16GX 16GB

Kingston KHX2666C15/16GX 16GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F4-2666C19-16GRS 16GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB