A-DATA Technology VDQVE1B16 2GB vs SK Hynix HMA81GS6CJR8N-VK 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 15.1

测试中的平均数值
更快的写入速度，GB/s

2,061.2 11.3

测试中的平均数值

SK Hynix HMA81GS6CJR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6CJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 46

左右 -31% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

SK Hynix HMA81GS6CJR8N-VK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 35
读取速度，GB/s

4,937.3 15.1
写入速度，GB/s

2,061.2 11.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

759 2631

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFD832A.C16FJ 16GB

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G Skill Intl F3-14900CL10-8GBXL 8GB

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Corsair CMD16GX4M2B2400C10 8GB

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Kingston 99P5471-016.A00LF 8GB

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Kingston 99U5471-053.A00LF 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Kingston ACR26D4S9D8MD-16 16GB

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Crucial Technology CT2K102464BD160B 8GB

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Avant Technology W641GU42J9266NB 8GB

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Smart Modular SF4641G8CK8IWGKSEG 8GB

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Team Group Inc. Team-Elite-1333 4GB

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SK Hynix HMA84GR7MFR4N-TF 32GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kllisre HMA81GU6AFR8N-VK 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9905624-051.A00G 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Corsair CMD64GX4M8A2800C16 8GB

Corsair CMD64GX4M8A2800C16 8GB