A-DATA Technology VDQVE1B16 2GB vs SK Hynix HMA82GR7MFR4N-UH 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

SK Hynix HMA82GR7MFR4N-UH 16GB

SK Hynix HMA82GR7MFR4N-UH 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 52

左右 12% 更低的延时
更快的读取速度，GB/s

4 10.4

测试中的平均数值

SK Hynix HMA82GR7MFR4N-UH 16GB

需要考虑的原因
SK Hynix HMA82GR7MFR4N-UH 16GB

报告一个错误

更快的写入速度，GB/s

7.6 2,061.2

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

SK Hynix HMA82GR7MFR4N-UH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 52
读取速度，GB/s

4,937.3 10.4
写入速度，GB/s

2,061.2 7.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 2384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW64GX4M8C3000C15 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Crucial Technology CT16G4SFD824A.C16FJ 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Apacer Technology 78.C1GS7.AUW0B 8GB

Apacer Technology 78.C1GS7.AUW0B 8GB

Corsair CMZ16GX3M2A1866C9 8GB

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Kingston LV32D4U2S8ME-16X 16GB