A-DATA Technology VDQVE1B16 2GB vs Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 46

左右 -100% 更低的延时
更快的写入速度，GB/s

7.3 2,061.2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 23
读取速度，GB/s

4,937.3 14.7
写入速度，GB/s

2,061.2 7.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 2476

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT64GX4M4C3466C16 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

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AMD AE34G1601U1 4GB

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Kingston 9905744-067.A00G 32GB

Kingston 9905744-067.A00G 32GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Kingston KHX3000C16/16GX 16GB

Kingston KHX3000C16/16GX 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Kingston 9905471-002.A00LF 2GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB