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AMD AE34G1339U2 4GB
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

AMD AE34G1339U2 4GB vs Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

总分
star star star star star
AMD AE34G1339U2 4GB

AMD AE34G1339U2 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

差异 规格 评论

差异

AMD AE34G1339U2 4GB 需要考虑的原因
AMD AE34G1339U2 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 26
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 12.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.8 left arrow 8.0
    测试中的平均数值

规格

完整的技术规格清单
AMD AE34G1339U2 4GB
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    26 left arrow 24
  • 读取速度，GB/s
    12.5 left arrow 15.5
  • 写入速度，GB/s
    8.0 left arrow 8.8
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2038 left arrow 2444

AMD AE34G1339U2 4GB RAM的比较

Patriot Memory (PDP Systems) PSD34G133381 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB RAM的比较

Patriot Memory (PDP Systems) PSD34G133381 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology CT51264BD1339.M16F 4GB
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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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G Skill Intl F4-2933C16-8GTZRX 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
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Samsung M378A5244CB0-CWE 4GB
内存RAM