AMD AE34G1601U1 4GB vs InnoDisk Corporation 16GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

InnoDisk Corporation 16GB

需要考虑的原因
InnoDisk Corporation 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 67

左右 -76% 更低的延时
更快的读取速度，GB/s

7.7 6.8

测试中的平均数值
更快的写入速度，GB/s

8.2 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

InnoDisk Corporation 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 38
读取速度，GB/s

6.8 7.7
写入速度，GB/s

3.6 8.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 2163

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-002.A00LF 2GB

Transcend Information TS2GSH64V1B 16GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

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Apacer Technology 78.01GA0.9K5 1GB

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Samsung 1600 CL10 Series 8GB

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Kingston KHX3733C19D4/16GX 16GB

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Corsair CMD16GX4M2B2400C10 8GB

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G Skill Intl F4-4000C18-8GVK 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston XW21KG-MIE-NX 8GB

Kingston XW21KG-MIE-NX 8GB

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Samsung M471B5273EB0-CK0 4GB

Kingston X75V1H-MIE 32GB

Kingston X75V1H-MIE 32GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Smart Modular SF4722G4CKHH6DFSDS 16GB

Smart Modular SF4722G4CKHH6DFSDS 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB