RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
AMD AE34G1601U1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

AMD AE34G1601U1 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 67
    左右 -116% 更低的延时
  • 更快的读取速度，GB/s
    12.5 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 31
  • 读取速度，GB/s
    6.8 left arrow 12.5
  • 写入速度，GB/s
    3.6 left arrow 9.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    998 left arrow 2361

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2400C15-4GRK 4GB
G Skill Intl F4-2400C15-4GRK 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston 9905678-023.A00G 8GB
Kingston 9905678-023.A00G 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
V-GEN D4H16GS24A8 16GB
V-GEN D4H16GS24A8 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston KHX2800C14D4/4GX 4GB
Kingston KHX2800C14D4/4GX 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMD16GX4M2K4133C19 8GB
Corsair CMD16GX4M2K4133C19 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Essencore Limited KD4AGS88A-26N1600 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Kingston KF2666C16D4/16G 16GB
Kingston KF2666C16D4/16G 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
内存RAM