AMD AE34G2139U2 4GB vs A-DATA Technology DDR4 3000 2OZ 8GB

总分

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分

A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

差异规格评论

差异

AMD AE34G2139U2 4GB

需要考虑的原因
AMD AE34G2139U2 4GB

报告一个错误

A-DATA Technology DDR4 3000 2OZ 8GB

需要考虑的原因
A-DATA Technology DDR4 3000 2OZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 56

左右 -75% 更低的延时
更快的读取速度，GB/s

16.9 7.4

测试中的平均数值
更快的写入速度，GB/s

13.1 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G2139U2 4GB

A-DATA Technology DDR4 3000 2OZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

56 32
读取速度，GB/s

7.4 16.9
写入速度，GB/s

5.6 13.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1462 3196

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Patriot Memory (PDP Systems) PSD38G13332 8GB

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Corsair CMT32GX4M2C3200C16 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

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Samsung M378A5143TB2-CTD 4GB

A-DATA Technology DDR3 1333G 2GB

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Apacer Technology 78.C2GFA.AF30B 8GB

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Kingston 9965525-155.A00LF 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N