AMD AE34G2139U2 4GB vs Corsair CMK64GX4M4B3333C16 16GB

总分

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分

Corsair CMK64GX4M4B3333C16 16GB

Corsair CMK64GX4M4B3333C16 16GB

差异规格评论

差异

AMD AE34G2139U2 4GB

需要考虑的原因
AMD AE34G2139U2 4GB

报告一个错误

Corsair CMK64GX4M4B3333C16 16GB

需要考虑的原因
Corsair CMK64GX4M4B3333C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 56

左右 -70% 更低的延时
更快的读取速度，GB/s

15.6 7.4

测试中的平均数值
更快的写入速度，GB/s

12.8 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G2139U2 4GB

Corsair CMK64GX4M4B3333C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

56 33
读取速度，GB/s

7.4 15.6
写入速度，GB/s

5.6 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1462 3370

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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Apacer Technology 78.BAGMD.AF20B 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Super Talent F24EB8GS 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Crucial Technology BLS8G4D30BESBK.8FD 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMD16GX4M4B3400C16 4GB

Corsair CMD16GX4M4B3400C16 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB