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AMD AE34G2139U2 4GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB

AMD AE34G2139U2 4GB vs Crucial Technology BLM16G44C19U4BL.M8FB 16GB

总分
star star star star star
AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分
star star star star star
Crucial Technology BLM16G44C19U4BL.M8FB 16GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

差异 规格 评论

差异

AMD AE34G2139U2 4GB 需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
Crucial Technology BLM16G44C19U4BL.M8FB 16GB 需要考虑的原因
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 56
    左右 -124% 更低的延时
  • 更快的读取速度，GB/s
    18.3 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD AE34G2139U2 4GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 25
  • 读取速度，GB/s
    7.4 left arrow 18.3
  • 写入速度，GB/s
    5.6 left arrow 16.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1462 left arrow 3911

AMD AE34G2139U2 4GB RAM的比较

AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HMA41GR7AFR4N-UH 8GB
SK Hynix HMA41GR7AFR4N-UH 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Gloway International (HK) STKD4GAM2133-F 8GB
Gloway International (HK) STKD4GAM2133-F 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C17-8GIS 8GB
G Skill Intl F4-2400C17-8GIS 8GB
内存RAM
Ramaxel Technology RMT1970ED48E8F1066 2GB
Ramaxel Technology RMT1970ED48E8F1066 2GB
Kingston 9965657-011.A00G 16GB
Kingston 9965657-011.A00G 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
SK Hynix GKE800SO102408-2400 8GB
SK Hynix GKE800SO102408-2400 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Apacer Technology 78.C1GMW.AZC0B 8GB
Apacer Technology 78.C1GMW.AZC0B 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston KHX2666C16S4/32G 32GB
Kingston KHX2666C16S4/32G 32GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9965640-006.A01G 32GB
Kingston 9965640-006.A01G 32GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
内存RAM