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AMD AE34G2139U2 4GB
G Skill Intl F4-3200C14-32GTZR 32GB

AMD AE34G2139U2 4GB vs G Skill Intl F4-3200C14-32GTZR 32GB

总分
star star star star star
AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分
star star star star star
G Skill Intl F4-3200C14-32GTZR 32GB

G Skill Intl F4-3200C14-32GTZR 32GB

差异 规格 评论

差异

AMD AE34G2139U2 4GB 需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
G Skill Intl F4-3200C14-32GTZR 32GB 需要考虑的原因
G Skill Intl F4-3200C14-32GTZR 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 56
    左右 -81% 更低的延时
  • 更快的读取速度，GB/s
    22.2 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.6 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD AE34G2139U2 4GB
G Skill Intl F4-3200C14-32GTZR 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 31
  • 读取速度，GB/s
    7.4 left arrow 22.2
  • 写入速度，GB/s
    5.6 left arrow 17.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1462 left arrow 3938

AMD AE34G2139U2 4GB RAM的比较

AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB

G Skill Intl F4-3200C14-32GTZR 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G13332 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Kingston KTD3KX-MIB 8GB
Kingston KTD3KX-MIB 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CM4X4GF2400Z16K4 4GB
Corsair CM4X4GF2400Z16K4 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C14-16GTRG 16GB
G Skill Intl F4-3600C14-16GTRG 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
V-GEN D4H16GS24A8 16GB
V-GEN D4H16GS24A8 16GB
内存RAM