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AMD AE34G2139U2 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

AMD AE34G2139U2 4GB vs Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

总分
star star star star star
AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

差异 规格 评论

差异

AMD AE34G2139U2 4GB 需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 56
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    20.3 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.3 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD AE34G2139U2 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 28
  • 读取速度，GB/s
    7.4 left arrow 20.3
  • 写入速度，GB/s
    5.6 left arrow 17.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1462 left arrow 3762

AMD AE34G2139U2 4GB RAM的比较

AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Corsair CMSX8GX4M2A2666C18 4GB
Corsair CMSX8GX4M2A2666C18 4GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Jinyu 16GB
Jinyu 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston KF3200C20S4/32GX 32MB
Kingston KF3200C20S4/32GX 32MB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Jinyu 16GB
Jinyu 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA84GR7AFR4N-UH 32GB
SK Hynix HMA84GR7AFR4N-UH 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KF3200C16D4/32GX 32GB
Kingston KF3200C16D4/32GX 32GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
内存RAM