AMD R5316G1609U2K 8GB vs Transcend Information TS1GLK64V3H 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Transcend Information TS1GLK64V3H 8GB

Transcend Information TS1GLK64V3H 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Transcend Information TS1GLK64V3H 8GB

需要考虑的原因
Transcend Information TS1GLK64V3H 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 73

左右 -115% 更低的延时
更快的读取速度，GB/s

10.2 6.3

测试中的平均数值
更快的写入速度，GB/s

6.0 5.2

测试中的平均数值

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Transcend Information TS1GLK64V3H 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

73 34
读取速度，GB/s

6.3 10.2
写入速度，GB/s

5.2 6.0
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1309 1900

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4SFS8266.C8FD1 8GB

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Kingston KHX3200C16D4/8GX 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Corsair CMY8GX3M2A2666C10 4GB

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Team Group Inc. DDR4 2800 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT16G4SFS8266.C8FE 16GB

Crucial Technology CT16G4SFS8266.C8FE 16GB