AMD R534G1601U1S-UO 4GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时
更快的读取速度，GB/s

14.7 12

测试中的平均数值
更快的写入速度，GB/s

9.2 9.1

测试中的平均数值

Micron Technology CT8G4DFD8213.16FA11 8GB

需要考虑的原因
Micron Technology CT8G4DFD8213.16FA11 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

Micron Technology CT8G4DFD8213.16FA11 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

14.7 12.0
写入速度，GB/s

9.2 9.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2272 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingston 9905403-156.A00LF 2GB

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Corsair CMSX32GX4M2A2400C16 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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Kingston 9965525-155.A00LF 8GB

Corsair CMD32GX4M2B2800C14 16GB

Corsair CMD32GX4M2B2800C14 16GB