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AMD R538G1601U2S 8GB
A-DATA Technology AO1P32MCST2-BZPS 16GB

AMD R538G1601U2S 8GB vs A-DATA Technology AO1P32MCST2-BZPS 16GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
A-DATA Technology AO1P32MCST2-BZPS 16GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 29
    左右 34% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 17.5
    测试中的平均数值
A-DATA Technology AO1P32MCST2-BZPS 16GB 需要考虑的原因
A-DATA Technology AO1P32MCST2-BZPS 16GB
报告一个错误
  • 更快的写入速度，GB/s
    16.6 left arrow 12.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 29
  • 读取速度，GB/s
    18.4 left arrow 17.5
  • 写入速度，GB/s
    12.3 left arrow 16.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 3754

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

A-DATA Technology AO1P32MCST2-BZPS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
SK Hynix HMA81GU6MFR8N-UH 8GB
SK Hynix HMA81GU6MFR8N-UH 8GB
内存RAM
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
G Skill Intl F4-3200C15-4GRKD 4GB
G Skill Intl F4-3200C15-4GRKD 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3200C16-16GTZKO 16GB
G Skill Intl F4-3200C16-16GTZKO 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Apacer Technology 78.D2GFH.4030B 16GB
Apacer Technology 78.D2GFH.4030B 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2400C16-8GIS 8GB
G Skill Intl F4-2400C16-8GIS 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C16-8GVGB 8GB
G Skill Intl F4-3200C16-8GVGB 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston KHX2666C13D4/4GX 4GB
Kingston KHX2666C13D4/4GX 4GB
内存RAM