AMD R538G1601U2S 8GB vs A-DATA Technology AO2P32NCSV1-BEVS 16GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 39

左右 51% 更低的延时
更快的读取速度，GB/s

18.4 17.5

测试中的平均数值
更快的写入速度，GB/s

12.3 9.1

测试中的平均数值

A-DATA Technology AO2P32NCSV1-BEVS 16GB

需要考虑的原因
A-DATA Technology AO2P32NCSV1-BEVS 16GB

报告一个错误

更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 39
读取速度，GB/s

18.4 17.5
写入速度，GB/s

12.3 9.1
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3189 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M378B5673EH1-CF8 2GB

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Ramaxel Technology RMSA3230KB78HAF2133 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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A-DATA Technology DDR3 1600 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Crucial Technology BL8G32C16U4R.M8FE 8GB

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Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMR64GX4M4A2666C16 16GB

Corsair CMR64GX4M4A2666C16 16GB

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Samsung M393B1K70QB0-CK0 8GB

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Micron Technology M471A1K43BB1-CRC 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Patriot Memory (PDP Systems) 3400 C16 Series 8GB