AMD R538G1601U2S 8GB vs Crucial Technology CT4G4DFS824A.C8FF 4GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Crucial Technology CT4G4DFS824A.C8FF 4GB

Crucial Technology CT4G4DFS824A.C8FF 4GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 23

左右 17% 更低的延时
更快的读取速度，GB/s

18.4 16.5

测试中的平均数值
更快的写入速度，GB/s

12.3 10.4

测试中的平均数值

Crucial Technology CT4G4DFS824A.C8FF 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FF 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Crucial Technology CT4G4DFS824A.C8FF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 23
读取速度，GB/s

18.4 16.5
写入速度，GB/s

12.3 10.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3189 2537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin 99[2/7/4]197F 8GB

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Avant Technology W641GU42J7240NC 8GB

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Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

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Apacer Technology 78.BAGN8.40C0B 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-4600C19-8GTZSWC 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CMU32GX4M4C3400C16 8GB

Corsair CMU32GX4M4C3400C16 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB