AMD R538G1601U2S 8GB vs Crucial Technology CT8G4DFRA266.C8FJ 8GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 38

左右 50% 更低的延时
更快的读取速度，GB/s

18.4 14.6

测试中的平均数值
更快的写入速度，GB/s

12.3 12.2

测试中的平均数值

Crucial Technology CT8G4DFRA266.C8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FJ 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 38
读取速度，GB/s

18.4 14.6
写入速度，GB/s

12.3 12.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3189 2915

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 76.B305G.D500B 4GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

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Transcend Information JM2666HLE-16G 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB