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AMD R538G1601U2S 8GB
Micron Technology 16KTF51264HZ-1G6M1 4GB

AMD R538G1601U2S 8GB vs Micron Technology 16KTF51264HZ-1G6M1 4GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 43
    左右 56% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 6.9
    测试中的平均数值
Micron Technology 16KTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB
报告一个错误

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    19 left arrow 43
  • 读取速度，GB/s
    18.4 left arrow 10.6
  • 写入速度，GB/s
    12.3 left arrow 6.9
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 1647

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Micron Technology 16KTF51264HZ-1G6M1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited KD4AGU880-36A180C 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM