AMD R538G1601U2S 8GB vs Micron Technology 18ASF2G72PDZ-2G3D1 16GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 39

左右 51% 更低的延时
更快的读取速度，GB/s

18.4 8.7

测试中的平均数值
更快的写入速度，GB/s

12.3 6.2

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 39
读取速度，GB/s

18.4 8.7
写入速度，GB/s

12.3 6.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3189 1842

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMG16GX4M2D3600C18 8GB

Corsair CMG16GX4M2D3600C18 8GB

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Samsung M471B5273DH0-CH9 4GB

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Kingston 9905403-011.A03LF 2GB

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Corsair CMH32GX4M4E3200C16 8GB