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AMD R538G1601U2S 8GB
Mushkin MR[A/B]4U300JJJM16G 16GB

AMD R538G1601U2S 8GB vs Mushkin MR[A/B]4U300JJJM16G 16GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
Mushkin MR[A/B]4U300JJJM16G 16GB

Mushkin MR[A/B]4U300JJJM16G 16GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 27
    左右 30% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 17.3
    测试中的平均数值
Mushkin MR[A/B]4U300JJJM16G 16GB 需要考虑的原因
Mushkin MR[A/B]4U300JJJM16G 16GB
报告一个错误
  • 更快的写入速度，GB/s
    14.5 left arrow 12.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
Mushkin MR[A/B]4U300JJJM16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 27
  • 读取速度，GB/s
    18.4 left arrow 17.3
  • 写入速度，GB/s
    12.3 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 3528

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Mushkin MR[A/B]4U300JJJM16G 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
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内存RAM
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内存RAM
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Kingston 99U5471-001.A00LF 2GB
内存RAM
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内存RAM
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内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
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内存RAM
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Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
内存RAM