AMD R538G1601U2S-UO 8GB vs G Skill Intl F4-3600C17-4GVK 4GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

G Skill Intl F4-3600C17-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3600C17-4GVK 4GB

报告一个错误

更快的读取速度，GB/s

14.8 14.2

测试中的平均数值
更快的写入速度，GB/s

11.5 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

G Skill Intl F4-3600C17-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

14.2 14.8
写入速度，GB/s

10.0 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2634 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston XF875V-HYA 8GB

Kingston XF875V-HYA 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3000C15-4GVR 4GB

G Skill Intl F4-3000C15-4GVR 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3200C14-16GFX 16GB

G Skill Intl F4-3200C14-16GFX 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Kingston KHX3300C16D4/4GX 4GB

Kingston KHX3300C16D4/4GX 4GB