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AMD R5S38G1601U2S 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB

AMD R5S38G1601U2S 8GB vs A-DATA Technology AO1P26KC8T1-BXPS 8GB

总分
star star star star star
AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分
star star star star star
A-DATA Technology AO1P26KC8T1-BXPS 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB

差异 规格 评论

差异

AMD R5S38G1601U2S 8GB 需要考虑的原因
AMD R5S38G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 85
    左右 56% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 5.4
    测试中的平均数值
A-DATA Technology AO1P26KC8T1-BXPS 8GB 需要考虑的原因
A-DATA Technology AO1P26KC8T1-BXPS 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R5S38G1601U2S 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 85
  • 读取速度，GB/s
    15.4 left arrow 12.0
  • 写入速度，GB/s
    9.2 left arrow 5.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2581 left arrow 1277

AMD R5S38G1601U2S 8GB RAM的比较

Kingston KHX1866C9D3/8GX 8GB
AMD R538G1601U2S 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Mushkin 99[2/7/4]202F 4GB
Mushkin 99[2/7/4]202F 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
SK Hynix GKE800SO51208-2133AH 8GB
SK Hynix GKE800SO51208-2133AH 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMK32GX4M2B3466C16 16GB
Corsair CMK32GX4M2B3466C16 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Transcend Information TS512MSH64V4H 4GB
Transcend Information TS512MSH64V4H 4GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Kingston 9905678-105.A00G 8GB
Kingston 9905678-105.A00G 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK32GX4M4D3600C18 8GB
Corsair CMK32GX4M4D3600C18 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMD16GX4M4B3200C15 4GB
Corsair CMD16GX4M4B3200C15 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BL8G32C16U4R.8FE 8GB
Crucial Technology BL8G32C16U4R.8FE 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A1K1KBB1-CRC 8GB
Samsung M471A1K1KBB1-CRC 8GB
内存RAM