AMD R5S38G1601U2S 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

更快的读取速度，GB/s

15.4 12.5

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 37

左右 -19% 更低的延时
更快的写入速度，GB/s

9.4 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 31
读取速度，GB/s

15.4 12.5
写入速度，GB/s

9.2 9.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2581 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Kingston ACR256X64D3S13C9G 2GB

Kingston ACR256X64D3S13C9G 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston 9965600-005.A00G 16GB

Kingston 9965600-005.A00G 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingston HP37D4U1S8ME-16XR 16GB

Kingston HP37D4U1S8ME-16XR 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

SK Hynix HMA82GR7AFR8N-VK 16GB

SK Hynix HMA82GR7AFR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB