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Apacer Technology 78.A1GA0.9L4 2GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB

Apacer Technology 78.A1GA0.9L4 2GB vs Crucial Technology BLS8G4D26BFSE.16FE 8GB

总分
star star star star star
Apacer Technology 78.A1GA0.9L4 2GB

Apacer Technology 78.A1GA0.9L4 2GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

差异 规格 评论

差异

Apacer Technology 78.A1GA0.9L4 2GB 需要考虑的原因
Apacer Technology 78.A1GA0.9L4 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.3
    测试中的平均数值
Crucial Technology BLS8G4D26BFSE.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 111
    左右 -283% 更低的延时
  • 更快的写入速度，GB/s
    13.9 left arrow 1,765.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Apacer Technology 78.A1GA0.9L4 2GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    111 left arrow 29
  • 读取速度，GB/s
    3,884.4 left arrow 17.3
  • 写入速度，GB/s
    1,765.7 left arrow 13.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    461 left arrow 3134

Apacer Technology 78.A1GA0.9L4 2GB RAM的比较

Kingston KPN424-ELJ 1GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Apacer Technology 78.A1GA0.9L4 2GB
Apacer Technology 78.A1GA0.9L4 2GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M393A2K40CB1-CRC 16GB
Samsung M393A2K40CB1-CRC 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston LV36D4U1S8HD-8XR 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3300C16-8GTZSW 8GB
G Skill Intl F4-3300C16-8GTZSW 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3200C22-16GRS 16GB
G Skill Intl F4-3200C22-16GRS 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Corsair CMD8GX4M2B3866C18 4GB
Corsair CMD8GX4M2B3866C18 4GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Panram International Corporation PUD42400C154G4NJK 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
内存RAM