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Asgard VMA45UG-MEC1U2AW1 8GB
Kingston XRMWRN-MIE2 16GB

Asgard VMA45UG-MEC1U2AW1 8GB vs Kingston XRMWRN-MIE2 16GB

总分
star star star star star
Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分
star star star star star
Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB

差异 规格 评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB 需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB
报告一个错误
Kingston XRMWRN-MIE2 16GB 需要考虑的原因
Kingston XRMWRN-MIE2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 47
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 9.2
    测试中的平均数值

规格

完整的技术规格清单
Asgard VMA45UG-MEC1U2AW1 8GB
Kingston XRMWRN-MIE2 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 33
  • 读取速度，GB/s
    11.8 left arrow 17.1
  • 写入速度，GB/s
    9.2 left arrow 13.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2323 left arrow 3286

Asgard VMA45UG-MEC1U2AW1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston XRMWRN-MIE2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Kingston XRMWRN-MIE2 16GB
Kingston XRMWRN-MIE2 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avant Technology J641GU42J5213N0 8GB
Avant Technology J641GU42J5213N0 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMD32GX4M4A2666C16 8GB
Corsair CMD32GX4M4A2666C16 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Kingston K6VDX7-MIE 8GB
Kingston K6VDX7-MIE 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3600C18-8GVK 8GB
G Skill Intl F4-3600C18-8GVK 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Avexir Technologies Corporation T-20181206 8GB
Avexir Technologies Corporation T-20181206 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung M471A1G43EB1-CPB 8GB
Samsung M471A1G43EB1-CPB 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
G Skill Intl F4-2133C15-8GRS 8GB
G Skill Intl F4-2133C15-8GRS 8GB
内存RAM