Asgard VMA45UG-MEC1U2AW1 8GB vs Transcend Information TS512MLH64V4H 4GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

Transcend Information TS512MLH64V4H 4GB

需要考虑的原因
Transcend Information TS512MLH64V4H 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 47

左右 -104% 更低的延时
更快的读取速度，GB/s

16.6 11.8

测试中的平均数值
更快的写入速度，GB/s

13.0 9.2

测试中的平均数值

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

Transcend Information TS512MLH64V4H 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 23
读取速度，GB/s

11.8 16.6
写入速度，GB/s

9.2 13.0
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2323 2548

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

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Crucial Technology BLT8G4D30AETA.K16FD 8GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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G Skill Intl F4-3200C16-16GVKA 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Kingston 9905678-007.A00G 8GB

Kingston 9905678-007.A00G 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N