ASint Technology SSA302G08-EGN1C 4GB vs Corsair CM4X8GE2400C16K4 8GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Corsair CM4X8GE2400C16K4 8GB

Corsair CM4X8GE2400C16K4 8GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

Corsair CM4X8GE2400C16K4 8GB

需要考虑的原因
Corsair CM4X8GE2400C16K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 26

左右 -24% 更低的延时
更快的读取速度，GB/s

16.7 12.6

测试中的平均数值
更快的写入速度，GB/s

10.2 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Corsair CM4X8GE2400C16K4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 21
读取速度，GB/s

12.6 16.7
写入速度，GB/s

9.5 10.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2174 2691

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CML16GX3M2A1600C10 8GB

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Corsair CMT128GX4M8X3600C18 16GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Kingmax Semiconductor GLLH22F-18---------- 16GB

A-DATA Technology AD73I1C1674EV 4GB

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Crucial Technology CB8GU2666.C8ET 8GB

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A-DATA Technology DQKD1A08 1GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB