RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
比较
ASint Technology SSA302G08-EGN1C 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
总分
ASint Technology SSA302G08-EGN1C 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
31
左右 16% 更低的延时
更快的读取速度,GB/s
12.6
11.8
测试中的平均数值
更快的写入速度,GB/s
9.5
8.1
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
31
读取速度,GB/s
12.6
11.8
写入速度,GB/s
9.5
8.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2174
2354
ASint Technology SSA302G08-EGN1C 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-013.A00LF 2GB
Kingston 9905701-020.A00G 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMK16GX4M2K4266C19 8GB
Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-3200C16-16GSXWB 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Samsung M378B5173BH0-CH9 4GB
Avant Technology J641GU42J5213ND 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3866C18-4GTZ 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
A-DATA Technology DDR4 2133 2OZ 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMW32GX4M2A2666C16 16GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-2400C15-8GRR 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMK128GX4M8A2400C14 16GB
Samsung DDR3 8GB 1600MHz 8GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
Crucial Technology CT102464BF160B-16F 8GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905622-051.A00G 8GB
报告一个错误
×
Bug description
Source link