ASint Technology SSA302G08-EGN1C 4GB vs Samsung M378A1K43CB2-CRC 8GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

Samsung M378A1K43CB2-CRC 8GB

需要考虑的原因
Samsung M378A1K43CB2-CRC 8GB

报告一个错误

更快的读取速度，GB/s

15.4 12.6

测试中的平均数值
更快的写入速度，GB/s

10.7 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Samsung M378A1K43CB2-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

12.6 15.4
写入速度，GB/s

9.5 10.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2174 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

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Kingston ACR32D4S2S8ME-16 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Apacer Technology 78.C1GM3.C7W0B 8GB

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Essencore Limited IM48GU88N26-FFFHMZ 8GB

Essencore Limited IM48GU88N26-FFFHMZ 8GB