ASint Technology SSA302G08-EGN1C 4GB vs Samsung M393A2K43DB3-CWE 16GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 53

左右 51% 更低的延时
更快的读取速度，GB/s

12.6 10.3

测试中的平均数值
更快的写入速度，GB/s

9.5 7.7

测试中的平均数值

Samsung M393A2K43DB3-CWE 16GB

需要考虑的原因
Samsung M393A2K43DB3-CWE 16GB

报告一个错误

更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Samsung M393A2K43DB3-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 53
读取速度，GB/s

12.6 10.3
写入速度，GB/s

9.5 7.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2174 2356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F4-2400C15-16GIS 16GB

G Skill Intl F4-2400C15-16GIS 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Mushkin MRA4S320GJJM32G 32GB

Mushkin MRA4S320GJJM32G 32GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston 9965600-005.A00G 16GB

Kingston 9965600-005.A00G 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston HP24D4U7S8MD-8 8GB

Kingston HP24D4U7S8MD-8 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston XJ69DF-MIE 8GB

Kingston XJ69DF-MIE 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3300C16-4GRKD 4GB

G Skill Intl F4-3300C16-4GRKD 4GB

Golden Empire CL5-5-5DDR2 1GB

Golden Empire CL5-5-5DDR2 1GB

G Skill Intl F4-2400C16-16GRS 16GB

G Skill Intl F4-2400C16-16GRS 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston KHX2933C17D4/16G 16GB

Kingston KHX2933C17D4/16G 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Golden Empire CL16-18-18 D4-2666 8GB

Golden Empire CL16-18-18 D4-2666 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Apacer Technology 78.CAGPL.ARC0B 8GB

Apacer Technology 78.CAGPL.ARC0B 8GB