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Avant Technology F641GU67F9333G 8GB
Mushkin 99[2/7/4]202F 4GB

Avant Technology F641GU67F9333G 8GB vs Mushkin 99[2/7/4]202F 4GB

总分
star star star star star
Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

总分
star star star star star
Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

差异 规格 评论

差异

Avant Technology F641GU67F9333G 8GB 需要考虑的原因
Avant Technology F641GU67F9333G 8GB
报告一个错误
Mushkin 99[2/7/4]202F 4GB 需要考虑的原因
Mushkin 99[2/7/4]202F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 28
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 6.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Avant Technology F641GU67F9333G 8GB
Mushkin 99[2/7/4]202F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 25
  • 读取速度，GB/s
    11.1 left arrow 15.0
  • 写入速度，GB/s
    6.5 left arrow 11.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2113 left arrow 2892

Avant Technology F641GU67F9333G 8GB RAM的比较

Mushkin 992018 (997018) 8GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB

Mushkin 99[2/7/4]202F 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1K43DB2-CTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Mushkin 99[2/7/4]202F 4GB
Mushkin 99[2/7/4]202F 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Essencore Limited KD4AGU880-32A160U 16GB
Essencore Limited KD4AGU880-32A160U 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-4400C18-8GTZRC 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Mushkin MB[A/B]4U240FFFF16G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C19-32GTRS 32GB
G Skill Intl F4-4400C19-32GTRS 32GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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Mushkin MRA4S320GJJM16G 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avexir Technologies Corporation T-20181206 8GB
Avexir Technologies Corporation T-20181206 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/8GX 8GB
Kingston KHX1600C9D3/8GX 8GB
内存RAM