Avant Technology F6451U64F9333G 4GB vs Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

总分

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

差异规格评论

差异

Avant Technology F6451U64F9333G 4GB

需要考虑的原因
Avant Technology F6451U64F9333G 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 -29% 更低的延时
更快的读取速度，GB/s

18.5 12.8

测试中的平均数值
更快的写入速度，GB/s

14.0 6.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Avant Technology F6451U64F9333G 4GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 21
读取速度，GB/s

12.8 18.5
写入速度，GB/s

6.7 14.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 3263

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CMK16GX4M1A2400C16 16GB

Corsair CMK16GX4M1A2400C16 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Transcend Information JM2400HSB-8G 8GB

Transcend Information JM2400HSB-8G 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMD16GX4M2C3333C16 8GB

Corsair CMD16GX4M2C3333C16 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3200C22-32GRS 32GB

G Skill Intl F4-3200C22-32GRS 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB