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Corsair CM3X8GA2400C11Y2R 8GB
A-DATA Technology DDR4 3600 2OZ 8GB

Corsair CM3X8GA2400C11Y2R 8GB vs A-DATA Technology DDR4 3600 2OZ 8GB

总分
star star star star star
Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分
star star star star star
A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

差异 规格 评论

差异

Corsair CM3X8GA2400C11Y2R 8GB 需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 25
    左右 20% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 19
    测试中的平均数值
A-DATA Technology DDR4 3600 2OZ 8GB 需要考虑的原因
A-DATA Technology DDR4 3600 2OZ 8GB
报告一个错误
  • 更快的写入速度，GB/s
    14.9 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CM3X8GA2400C11Y2R 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 25
  • 读取速度，GB/s
    19.1 left arrow 19.0
  • 写入速度，GB/s
    13.1 left arrow 14.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3252 left arrow 3683

Corsair CM3X8GA2400C11Y2R 8GB RAM的比较

Avexir Technologies Corporation DDR3-2800 CL12 8GB 8GB
Corsair CMY8GX3M2B2133C9 4GB

A-DATA Technology DDR4 3600 2OZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology AX5U6000C4016G-B 16GB
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内存RAM
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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
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内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
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内存RAM
A-DATA Technology DOVF1B163G2G 2GB
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内存RAM
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Samsung M393B2G70BH0-YK0 16GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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内存RAM
Kingston KHX3200C16D4/8GX 8GB
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905403-134.A00LF 2GB
Kingston XW21KG-MIE2 8GB
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内存RAM