Corsair CMD16GX3M2A1866C9 8GB vs Crucial Technology CT16G4DFD8213.C16FH1 16GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

更快的读取速度，GB/s

16 14.8

测试中的平均数值
更快的写入速度，GB/s

10.3 8.2

测试中的平均数值

Crucial Technology CT16G4DFD8213.C16FH1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FH1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 34

左右 -6% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 32
读取速度，GB/s

16.0 14.8
写入速度，GB/s

10.3 8.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2782 2533

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF1G64HZ-2G6E1 8GB

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Kingston 9905403-515.A00LF 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

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Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB