Corsair CMD16GX3M4A2666C11 4GB vs Wilk Elektronik S.A. GR2133D464L15/8G 8GB

总分

Corsair CMD16GX3M4A2666C11 4GB

Corsair CMD16GX3M4A2666C11 4GB

总分

Wilk Elektronik S.A. GR2133D464L15/8G 8GB

Wilk Elektronik S.A. GR2133D464L15/8G 8GB

差异规格评论

差异

Corsair CMD16GX3M4A2666C11 4GB

需要考虑的原因
Corsair CMD16GX3M4A2666C11 4GB

报告一个错误

更快的读取速度，GB/s

18.6 14.5

测试中的平均数值
更快的写入速度，GB/s

12.9 9.1

测试中的平均数值

Wilk Elektronik S.A. GR2133D464L15/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. GR2133D464L15/8G 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M4A2666C11 4GB

Wilk Elektronik S.A. GR2133D464L15/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 25
读取速度，GB/s

18.6 14.5
写入速度，GB/s

12.9 9.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3236 2368

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT512T64U88B0BY-3C 512MB

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G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 9965667-001.A00G 16GB

Kingston 9965667-001.A00G 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB