Corsair CMD8GX3M2A2933C12 4GB vs Crucial Technology CT16G4DFD824A.C16FBD 16GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

Crucial Technology CT16G4DFD824A.C16FBD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FBD 16GB

报告一个错误

更快的读取速度，GB/s

15.4 13.5

测试中的平均数值
更快的写入速度，GB/s

10.9 9.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

13.5 15.4
写入速度，GB/s

9.3 10.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2278 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4800C18-8GTRS 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F3-1600C9-4GAO 4GB

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Samsung M393A1G43EB1-CRC 8GB

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PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.D2GF2.AU30B 16GB

Apacer Technology 78.D2GF2.AU30B 16GB

Crucial Technology CT51264BD1339.M16F 4GB

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Kingston 9905713-001.A00G 4GB

Kingston 9905713-001.A00G 4GB

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology RM51264BA1339.16FR 4GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Chun Well Technology Holding Limited D4U0836144B 8GB