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Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT8G4DFRA266.C8FE 8GB

Corsair CMD8GX3M2A2933C12 4GB vs Crucial Technology CT8G4DFRA266.C8FE 8GB

总分
star star star star star
Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分
star star star star star
Crucial Technology CT8G4DFRA266.C8FE 8GB

Crucial Technology CT8G4DFRA266.C8FE 8GB

差异 规格 评论

差异

Corsair CMD8GX3M2A2933C12 4GB 需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 15% 更低的延时
Crucial Technology CT8G4DFRA266.C8FE 8GB 需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 33
  • 读取速度，GB/s
    13.5 left arrow 16.9
  • 写入速度，GB/s
    9.3 left arrow 13.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2278 left arrow 3134

Corsair CMD8GX3M2A2933C12 4GB RAM的比较

Samsung M471B5273DH0-CK0 4GB
Mushkin 992015 (997015) 4GB

Crucial Technology CT8G4DFRA266.C8FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston MSI26D4S9D8ME-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Corsair CMD8GX3M2A2933C12 4GB
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Crucial Technology CT8G4DFRA266.C8FE 8GB
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内存RAM
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内存RAM
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G Skill Intl F4-3600C16-16GTZRC 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB
内存RAM
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内存RAM
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Kingston 9905403-444.A00LF 4GB
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内存RAM
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Samsung M393A1G40DB0-CPB 8GB
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Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM