Corsair CMD8GX3M2A2933C12 4GB vs Kllisre M378A5143EB2-CRC 4GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 40% 更低的延时
更快的读取速度，GB/s

13.5 11.1

测试中的平均数值
更快的写入速度，GB/s

9.3 7.9

测试中的平均数值

Kllisre M378A5143EB2-CRC 4GB

需要考虑的原因
Kllisre M378A5143EB2-CRC 4GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Kllisre M378A5143EB2-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 47
读取速度，GB/s

13.5 11.1
写入速度，GB/s

9.3 7.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2278 1967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-2133C15-8GVR 8GB

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Corsair CMU16GX4M2D3000C16 8GB

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Samsung M471B5273EB0-CK0 4GB

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Crucial Technology CT16G4DFD8266.C16FD1 16GB

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A-DATA Technology VDQVE1B16 2GB

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A-DATA Technology AM2P32NC8W1-BCFS 8GB

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Samsung M395T5160QZ4-CE66 2GB

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Corsair CMU16GX4M2C3000C15 8GB

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Kingston 99U5403-036.A00G 4GB

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EVGA 8GX-D4-3000-MR 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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G Skill Intl F4-2666C19-32GNT 32GB

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AMD R5S38G1601U2S 8GB

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SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Corsair CM2X1024-8500C5D 1GB

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G Skill Intl F4-4800C18-8GTRS 8GB

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Kingston 9965525-018.A00LF 4GB

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Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Samsung M393B5270CH0-CH9 4GB

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A-DATA Technology DDR4 3200 2OZ 4GB

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