Corsair CMD8GX3M2A2933C12 4GB vs Micron Technology 8R8F1G64HZ-2G3B1 8GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

更快的写入速度，GB/s

9.3 6.8

测试中的平均数值

Micron Technology 8R8F1G64HZ-2G3B1 8GB

需要考虑的原因
Micron Technology 8R8F1G64HZ-2G3B1 8GB

报告一个错误

更快的读取速度，GB/s

14.8 13.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

13.5 14.8
写入速度，GB/s

9.3 6.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2278 2014

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CM4X4GF2133C13K4 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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PNY Electronics PNY 2GB

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SK Hynix HMAA4GU6AJR8N-XN 32GB

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Micron Technology 16ATF2G64HZ-2G3B1 16GB

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A-DATA Technology AD73I1C1674EV 4GB

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Patriot Memory (PDP Systems) 2666 C16 Series 8GB

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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

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Samsung M471B1G73DB0-YK0 8GB

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Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire CL16-16-16 D4-2800 8GB

Golden Empire CL16-16-16 D4-2800 8GB