Corsair CML8GX3M1A1600C9 8GB vs G Skill Intl F4-3600C16-8GTZKW 8GB

总分

Corsair CML8GX3M1A1600C9 8GB

Corsair CML8GX3M1A1600C9 8GB

总分

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

差异规格评论

差异

Corsair CML8GX3M1A1600C9 8GB

需要考虑的原因
Corsair CML8GX3M1A1600C9 8GB

报告一个错误

G Skill Intl F4-3600C16-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 36

左右 -64% 更低的延时
更快的读取速度，GB/s

21.1 13.6

测试中的平均数值
更快的写入速度，GB/s

17.4 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M1A1600C9 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 22
读取速度，GB/s

13.6 21.1
写入速度，GB/s

9.2 17.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2615 4142

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston ACR32D4U2S1ME-8 8GB

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Nanya Technology M2F4G64CB8HG5N-CG 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BL8G30C15U4W.M8FE 8GB

Crucial Technology BL8G30C15U4W.M8FE 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

Kingston 9905744-023.A00G 16GB

Kingston 9905744-023.A00G 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB